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HgCdTe固态再结晶技术主要包括合成-淬火-退火三个过程,本文对其中的合成工艺和淬火工艺进行改进,获得了较为满意的效果。用这种方法制备的HgCdTe材料单晶大、组份均匀、结构完整、电学参数好,并已做出多种高性能红外探测器
HgCdTe solid state recrystallization technology mainly includes three processes of synthesis-quenching-annealing. In this paper, the synthesis process and the quenching process are improved, and the satisfactory results are obtained. The HgCdTe material prepared by this method has a large single crystal, uniform composition, complete structure and good electrical parameters. A variety of high-performance infrared detectors have been made