The charge storage characteristics of P-channel Ge/Si hetero-nanocrystal based MOSFET memory has been investigated and a logical array has been constructed using this memory cell. In the case of the thickness of tunneling oxide T_ox=2nm and the dimensions of Si- and Ge-nanocrystal D_Si=D_Ge=5nm, the retention time of this device can reach ten years(~1×10~8s) while the programming and erasing time achieve the orders of microsecond and millisecond at the control gate voltage |V_g|=3V with respect to N-wells, respectively. Therefore, this novel device, as an excellent nonvolatile memory operating at room temperature, is desired to obtain application in future VLSI. The charge storage characteristics of P-channel Ge / Si hetero-nanocrystal based MOSFET memory has been investigated and a logical array has been constructed using this memory cell. In the case of the thickness of tunneling oxide T_ox = 2nm and the dimensions of Si- and Ge-nanocrystal D_Si = D_Ge = 5 nm, the retention time of this device can reach ten years (~ 1 × 10 ~ 8s) while the programming and erasing time achieve the orders of microsecond and millisecond at the control gate voltage | V_g | = 3V with respect to N-wells, respectively. Thus, this novel device, as an excellent nonvolatile memory operating at room temperature, is desired to obtain application in future VLSI.