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采用磁控溅射方法制备了Ta/NiFe/Bi(Ag,Cu)/FeMn/Ta和Ta/NiFeⅠ/FeMn/Bi(Ag,Cu)/NiFeⅡ/Ta多层膜.通过X射线衍射研究了薄膜样品Ta/NiFe/Bi(Ag,Cu)/FeMn/Ta的织构.在NiFeⅠ/FeMn界面沉积大量的Cu也不会影响FeMn层的(111)织构.与此相反,在NiFeⅠ/FeMn界面沉积少量的Bi和Ag,FeMn层的织构就会受到破坏.研究发现,这与隔离层原子的晶体结构和晶格常数有关.在Ta/NiFeⅠ/FeMn/Bi(Ag,Cu)/NiFeⅡ/Ta多层膜中,研究了反铁磁薄膜FeMn与铁磁薄膜NiFeⅠ和NiFeⅡ间的交换耦合场Hex1和Hex2相对于非磁金属隔离层Bi,Ag和Cu厚度的变化关系.实验结果表明,随着非磁金属隔离层厚度的增加,Hex1的大小基本不变,保持在10.35～11.15kA/m之间.交换偏置场Hex2随着Bi,Ag和Cu厚度的增加急剧下降并趋于平滑.当Bi,Ag和Cu的厚度分别为0.6,1.2和0.6nm时,交换偏置场Hex2下降为0.87,0.56和0.079kA/m.此后,随着隔离层厚度的增加交换偏置场Hex2基本不变.
The multilayer films of Ta / NiFe / Bi (Ag, Cu) / FeMn / Ta and Ta / NiFeⅠ / FeMn / Bi (Ag, Cu) / NiFeⅡ / Ta were prepared by magnetron sputtering method.The films were characterized by X-ray diffraction The texture of the sample Ta / NiFe / Bi (Ag, Cu) / FeMn / Ta. The deposition of a large amount of Cu at the NiFeⅠ / FeMn interface does not affect the (111) texture of the FeMn layer. The results show that this is related to the crystal structure and lattice constants of the atoms in the isolation layer. In the case of Ta / NiFe I / FeMn / Bi (Ag, Cu) / NiFe II / Ta multilayers, the relationship between the exchange coupling fields Hex1 and Hex2 of the antiferromagnetic FeMn and the ferromagnetic thin films NiFeⅠ and NiFeⅡ with respect to the Bi, Ag and Cu thickness of the non-magnetic metal separator was studied.The experimental results show that with the increase of With the increase of the thickness of the non-magnetic metal separator, the size of Hex1 remains unchanged at 10.35 ~ 11.15kA / m. The exchange bias field Hex2 sharply descends and tends to be smooth with the increase of Bi, Ag and Cu thicknesses. When the thicknesses of Bi, Ag and Cu are 0.6, 1.2 and 0.6 nm, respectively, the exchange bias field Hex2 decreases to 0.87, 0.56 and 0.079 kA / m. Thereafter, the exchange bias field Hex2 basically does not increase as the thickness of the isolation layer increases change.