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本研究用扫描电镜（ＳＥＭ）电子束曝光技术和相应的计算机联机成像程序，在ＩｎＧａＡｓＰ／ＩｎＰ液相外延片上形成电子束光刻图形，并采用选择腐蚀等技术，由ＫＹＫＹ－１０００ＢＳＥＭ并附Ｘ射线能谱仪和图像处理系统对研制过程进行监控，成功地在国内首次研制出由ＩｎＧａＡｓＰ单量子阶分别限制的五层四元系组成的新型半导体微盘激光器，微盘直径为２－７μｍ，盘厚０．２－０．４μｍ。这一成功为开展半导体微盘激光器的研究打下了良好的基础。
In this study, electron beam lithography patterns were formed on InGaAsP / InP liquid crystal epitaxial wafers by scanning electron microscopy (SEM) electron beam exposure and corresponding computer on-line imaging procedures. The electron beam lithography patterns were selected by KYKY-1000BSEM with X-ray Energy spectrometer and image processing system to monitor the development process, successfully developed the first in China for the InGaAsP single quantum limit five-layer quaternary system consisting of a new type of semiconductor micro-disk laser, the micro-disk diameter of 2-7μm, disk thickness 0 .2-0.4 μm. This success has laid a good foundation for the research of semiconductor microdisk laser.