显微拉曼光谱术在微纳电子学研究中的应用

来源 :光散射学报 | 被引量 : 0次 | 上传用户:Jul-83
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拉曼光谱对被测样品的晶格与分子振动、转动能量非常敏感,而且拉曼光谱的测量具有非破坏性。在微纳电子学研究中,需要原位的、高空间分辨率的、非接触的测量方法研究各种材料、器件的晶态、应力、热学性质等参数。由此,显微拉曼光谱术就成为一种能够满足上诉要求的、实现多种参数测量的重要的手段。本文通过调研和实验研究了显微拉曼光谱术在硅、低维碳纳米材料等的晶态、应力、热学等研究领域的具体应用,以及一些新出现的研究手段。从大量的相关报道不难看出,显微拉曼光谱术在微纳电子学的进一步发展中将会有更为广泛和深入的应用。 Raman spectroscopy is very sensitive to the crystal lattice and molecular vibration and rotational energy of the tested sample, and the measurement of Raman spectrum is non-destructive. In micro / nano electronics research, in-situ, high spatial resolution, non-contact measurement methods are needed to study the parameters such as the crystallinity, stress and thermal properties of various materials and devices. As a result, micro-Raman spectroscopy becomes an important tool for fulfilling appeals and achieving a wide range of parametric measurements. In this paper, we investigate the application of Raman microscopy in crystalline, stress and thermal fields of silicon and low dimensional carbon nanomaterials, as well as some emerging research methods. From a large number of related reports is not difficult to see that the microscopic Raman spectroscopy in the further development of micro and nano electronics will have a more extensive and in-depth application.
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