A low-power CMOS smart temperature sensor for RFID application

来源 :Journal of Semiconductors | 被引量 : 0次 | 上传用户:mdjpos01
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This paper presents the design and implement of a CMOS smart temperature sensor,which consists of a low power analog front-end and a 12-bit low-power successive approximation register(SAR) analog-to-digital converter(ADC).The analog front-end generates a proportional-to-absolute-temperature(PTAT) voltage with MOSFET circuits operating in the sub-threshold region.A reference voltage is also generated and optimized in order to minimize the temperature error and the 12-bit SAR ADC is used to digitize the PTAT voltage.Using 0.18μm CMOS technology,measurement results show that the temperature error is -0.69/+0.85 °C after one-point calibration over a temperature range of 40 to 100°C.Under a conversion speed of 1K samples/s,the power consumption is only 2.02μW while the chip area is 230×225 m2,and it is suitable for RFID application. This paper presents the design and implement of a CMOS smart temperature sensor, which consists of a low power analog front-end and a 12-bit low-power two-phase approximation register (SAR) analog-to-digital converter front-end generates a proportional-to-absolute-temperature (PTAT) voltage with MOSFET circuits operating in the sub-threshold region. A reference voltage is also generated and optimized in order to minimize the temperature error and the 12-bit SAR ADC is used to digitize the PTAT voltage. Using 0.18 μm CMOS technology, measurement results show that the temperature error is -0.69 / + 0.85 ° C after one-point calibration over a temperature range of 40 to 100 ° C. Unit conversion speed of 1K samples / s, the power consumption is only 2.02μW while the chip area is 230 × 225m2, and it is suitable for RFID application.
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