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研究了超连续谱光源对可见光CMOS图像传感器辐照的实验现象和规律。观察到随着入射激光功率的不断增大,CMOS图像传感器依次出现了像元饱和、局部饱和、局部过饱和以及全屏饱和等现象。与1 060 nm锁模光纤激光辐照同种图像传感器的实验相对比,从有效干扰面积、图像相关度及图像均方差等三个方面,对比了两种干扰源在影响CMOS图像传感器成像质量方面的异同,发现CMOS图像传感器的响应特性、激光的频谱特性和成像光学系统的色散是导致干扰效果差异的主要原因。
The experimental phenomena and regularities of superconducting spectral light source for visible light CMOS image sensor were studied. It is observed that as the power of the incident laser increases, the CMOS image sensor successively appears pixel saturation, local saturation, partial supersaturation and full-screen saturation. Compared with the experiment of 1 060 nm mode-locked fiber laser irradiating the same type of image sensor, the two interference sources are compared in terms of effective interference area, image correlation and image mean square deviation It is found that the response characteristics of the CMOS image sensor, the spectral characteristics of the laser and the dispersion of the imaging optical system are the main causes of the differences in the interference effects.