论文部分内容阅读
通过交流电导法,对经过不同时间N_2O快速热处理(RTP)的MOS电容进行界面特性和辐照特性研究。通过电导电压曲线,分析N_2O RTP对Si-SiO_2界面陷阱电荷和氧化物陷阱电荷造成的影响。结论表明,MOS电容的Si-SiO_2界面陷阱密度随N_2O快速热处理时间先增加再降低;零偏压总剂量辐照使氧化层陷阱电荷显著增加,而Si-SiO_2界面陷阱电荷轻微减少。
The AC conductance method was used to study the interfacial properties and the radiation characteristics of MOS capacitors after rapid thermal treatment (RTP) of N 2 O at different time. The effect of N_2O RTP on trap charge and oxide trap charge at Si-SiO_2 interface was analyzed by conductance curve. The results show that the trap density of Si-SiO_2 interface of MOS capacitor firstly increases and then decreases with the rapid heat treatment time of N_2O. The total charge of zero bias increases the charge of oxide layer, while the trap charge of Si-SiO_2 interface decreases slightly.