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采用磁控溅射法,以Si粉和溅金Si(111)为原料,加入C粉,在Si(111)衬底上制备无定形SiO2纳米线。首先,在Si(111)衬底上分别溅射厚度为18和36 nm的Au。然后,在1 100℃条件下处理80 min。用扫描电子显微镜(SEM)、X射线光电子能谱(XPS)、傅里叶红外光谱(FTIR)和X射线衍射方法 (XRD)等测试手段对退火后的SiO2纳米线的表面相貌、微观结构进行分析。结果表明,反应后有大量长而直的SiO2纳米线生成。而且随着溅射Au厚度的增加,SiO2纳米线的数量增多,且长度更长。这表明,SiO2纳米线的生长与溅射Au的厚度密切相关。
Using magnetron sputtering method, Si powder and sputter gold Si (111) were used as raw materials, and C powder was added to prepare amorphous SiO2 nanowires on a Si (111) substrate. First, Au of 18 and 36 nm in thickness were sputtered on a Si (111) substrate, respectively. Then, it was treated at 1,100 ° C for 80 min. The surface morphology and microstructure of the annealed SiO2 nanowires were characterized by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR) and X-ray diffraction (XRD) analysis. The results show that a large number of long and straight SiO2 nanowires are formed after the reaction. And with the increase of sputtered Au thickness, the number of SiO2 nanowires increases and the length is longer. This shows that the growth of SiO2 nanowires is closely related to the thickness of sputtered Au.