论文部分内容阅读
中国电子学会半导体与集成技术学会和微波学会联合召开的砷化镓场效应管(GaAsFET)研制与应用、微波集成电路(MIC)结构与工艺学术讨论会,于1984年5月7日至11日在福建省泉州市举行.会议由南京固体器件研究所、上海微波技术研究所和泉州半导体器件厂共同组织,到会有来自全国的研究所、工厂、部队和大专院校42个单位的科技人员、教授和专家76人.会议收到有关GaAs FET的论文报告共30篇,会上宣读26篇,其中器件设计制造和测试分析5篇,放大器18篇,振荡器和高频头5篇,计算机应用2篇;有关MIC结构与工艺论文报告共34篇,会上宣读21篇,其中工艺研制8篇,设备改进3篇,基片材料3篇,综述和电路应用7篇.还有“微波集成电路技术及工艺的进展”和“FET微波宽带放大器综述”两个动态水平报告.
China Institute of semiconductor and integrated semiconductor technology and microwave society jointly organized by the GaAsFET development and application of microwave integrated circuits (MIC) structure and technology seminars, in the May 7, 1984 to 11 Held in Quanzhou, Fujian Province, was jointly organized by Nanjing Institute of Solid Devices, Shanghai Institute of Microwave Technology and Quanzhou Semiconductor Devices Factory, and was attended by 42 scientific and technical personnel from institutes, factories, troops and universities in China , Professors and experts 76. The meeting received a total of 30 papers on the GaAs FET report, read 26 sessions, including device design and manufacture and test analysis of 5, 18 amplifiers, oscillator and tuner 5, computer Application of 2; MIC structure and process papers reported a total of 34 articles, read 21 at the meeting, including 8 technology research and development, equipment improvements 3, 3 substrate materials, review and application of circuit 7. There are “microwave integrated Progress in Circuit Technology and Processes ”and“ Overview of FET Microwave Broadband Amplifiers ”.