报道了法布里－珀罗干涉仪用作半导体激光器外腔的选模原理和选模及锁模实验。通过压电陶瓷调节Ｆ－Ｐ干涉仪的间距，实现了半导体激光器本身的静态及动态单纵模运转，在调制频率为６５６ＭＨｚ的情况下，获得了近变换极限的外腔锁模高斯形超短脉冲，脉宽为１３ｐｓ，时间带宽乘积为０．４６。最后讨论了Ｆ－Ｐ干涉仪对半导体激光器的模式特性的影响。 Reported Fabry-Perot interferometer used as a semiconductor laser cavity selection principle and the selection mode and mode-locking experiment. By adjusting the distance between the F-P interferometer and the piezoelectric ceramic, the static and dynamic longitudinal mode operation of the semiconductor laser itself is achieved. In the case of a modulation frequency of 656 MHz, the near-extrinsic limiting cavity-locked Gaussian ultra-short Pulse, pulse width 13ps, time bandwidth product is 0.46. Finally, the influence of the F-P interferometer on the mode characteristics of the semiconductor laser is discussed.