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硅的氮化物薄膜用DC-PCVD装置沉积,这种装置在沉积过程中仅用直流电源。涂覆用的基体材料是单晶硅、2Cr13不锈钢等。用扫描电镜研究了薄膜的形态,用红外光谱、X射线衍射仪、透射电镜确认了薄膜的成分、结构。这些结果表明:涂覆试样由表面的超硬层,过渡层、基体三部分组成;超硬层主要含非晶态的Si_2N_4;薄膜由许多致密堆积的小球组成。涂覆试样的表面硬度(H_(V0.02))大约是43000～47000 MPa。涂层与基体之间结合力为15N左右。
Silicon nitride films are deposited using a DC-PCVD device, which uses only DC power during deposition. The substrate used for coating is single crystal silicon, 2Cr13 stainless steel and the like. The morphology of the films was investigated by scanning electron microscopy. The composition and structure of the films were confirmed by infrared spectroscopy, X-ray diffraction and transmission electron microscopy. The results show that the coated samples consist of three layers of superhard layer, transition layer and matrix. The superhard layer mainly contains amorphous Si_2N_4. The film consists of many densely packed beads. The surface hardness of coated samples (H_ (V0.02)) is about 43000 ~ 47000 MPa. Cohesion between the coating and the substrate is about 15N.