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用XPS,SSIMS,ISS研究了CuCl在γ-Al_2O_3上的分散状态。结果指出:CuCl在γ-Al_2O_3表面呈单层分散,用XPS得出的I_Cu/I_Al强度比与总CuCl含量曲线的转折点同XRD外推法得到的最大单层分散量相近。Cu 2p3/2光电子结合能随样品中CuCl浓度的增加而下降,分散后的CuCl与纯CuCl在价带谱上有明显不同。ISS研究表明,CuCl/γ-Al_2O_3上单层分散的Cu~+对He~+的散射峰比纯CuCl高11eV,这些结果说明CuCl与γ-Al_2O_3表面有较强的相互作用。分散后CuCl的Auger峰变宽可由γ-Al_2O_3表面的不均匀性解释。
The dispersion of CuCl on γ-Al 2 O 3 was studied by XPS, SSIMS and ISS. The results show that CuCl is monolayer dispersed on the surface of γ-Al 2 O 3, and the maximum monolayer dispersion obtained by XRD and I-Cu / I_Al intensity ratio is the same as that of total CuCl content curve. The photoelectron binding energy of Cu 2p3 / 2 decreases with the increase of CuCl concentration in the sample. The results of ISS showed that the monolayer dispersed Cu ~ + on CuCl / γ-Al_2O_3 has a higher He + scattering peak 11eV than pure CuCl. These results indicate that CuCl has a strong interaction with γ-Al_2O_3 surface. The dispersion of Cuger Auger peak after dispersion can be explained by the inhomogeneity of γ-Al 2 O 3 surface.