针对太阳辐照度测量仪器高性能及微型化的要求,研究了一种绝对辐射计的关键器件———微机电系统(MEMS)微型红外辐射探测芯片。该芯片以在红外宽光谱范围内具备高吸收率的镍磷黑膜层吸收辐射,以高机械性能、高热导率且绝缘的金刚石材料作为基片,利用集成的薄膜电阻丝进行电加热等效。制备的镍磷黑红外吸收膜层的表面具有较多无规则微孔,其直径分布在50nm～10μm,形成一个布满微孔特征的表面。镍磷黑红外吸收膜层的反射率在1.5～16μm光谱范围为0.4%以下,其红外透射比在1.5～15μm波段为0.15%以下,从而有效吸收率达到0.99以上。选择电学性能稳定的康铜材料作为薄膜电阻丝材料,采用MEMS工艺制备薄膜电阻丝。薄膜电阻丝的电阻稳定在50.3kΩ,能够满足红外辐射探测芯片的设计要求。 Aimed at the requirements of high performance and miniaturization of solar irradiance measuring instruments, a key component of absolute radiometer is studied, which is Micro-Electro-Mechanical System (MEMS) micro-infrared radiation detection chip. The chip absorbs radiation with a nickel-phosphorus black film having a high absorption in a wide infrared spectral range, electrically heated with an integrated thin-film resistance wire using a high-mechanical, high-thermal-conductivity and insulating diamond material as a substrate . The prepared nickel-phosphorus black infrared absorption film has more irregular micro-pores on the surface, with the diameter ranging from 50 nm to 10 μm, forming a surface with micropore characteristics. The reflectance of nickel-phosphorus black infrared absorption film is 0.4% or less in the 1.5-16μm spectral range, and the infrared transmittance is 0.15% or less in the 1.5-15μm band, so that the effective absorption rate reaches 0.99 or more. Select the stable electrical properties of Kang Copper material as a thin film resistance wire material, the use of MEMS technology to prepare thin film resistance wire. The resistance of the thin-film resistor wire stabilized at 50.3kΩ, able to meet the design requirements of the infrared radiation detection chip.