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采用溶胶-凝胶法制备了纳米CeO2粉体,并采用XRD、TOF-SIMS对其进行了表征。结果表明平均晶粒度在13.3nm,粒度分布均匀。进而研究了纳米CeO2在玻璃基片抛光中的抛光性能。ZYGO形貌仪表明,抛光后其表面平均粗糙度值(Ra)可降低到0.6nm左右。原子力显微镜(AFM)在5μm×5μm范围内测得基片表面粗糙度Ra值为0.281nm,表面光滑,划痕等表面微观缺陷明显改善。
CeO2 powders were prepared by sol-gel method and characterized by XRD and TOF-SIMS. The results show that the average grain size of 13.3nm, particle size distribution. Then the polishing performance of nano-CeO2 in glass substrate polishing was studied. ZYGO topograph shows that after polishing the surface roughness (Ra) can be reduced to about 0.6nm. Atomic force microscope (AFM) in the range of 5μm × 5μm, the surface roughness Ra value of the substrate was 0.281nm, the surface was smooth and the surface microscopic defects such as scratches were obviously improved.