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MOSFET作为一个时代的产物,随着技术领域的发展与进步,特别是针对大电流、小封装以及低功耗的MODFET器件的出现,已经得以广泛的运用。在中波发射机的脉宽调制以及功放电路当中被大量使用。但由于MOSFET器件自身特性的影响,在防雷防静电的操作当中存在一定困难。此次研究的根本目的,在于对TS-01C中波发射机MOSFET器件防击穿的方法进行探究,旨在探索解决方法。
MOSFET as a product of an era, with the development and progress in the field of technology, especially for the emergence of high current, small package and low power MODFET devices, has been widely used. It is widely used in pulse width modulation and power amplifier circuits of medium wave transmitters. However, due to the characteristics of the MOSFET device itself, there are some difficulties in the anti-static and anti-static operation. The fundamental purpose of this study is to explore the method of preventing penetration of the TS-01C medium-wave transmitter MOSFET device and to explore solutions.