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Confined geometry can change the defect structure and its properties.In this paper,we investigate numerically the dynamics of a dipole of ±1/2 parallel wedge disclination lines in a confined geometry:a thin hybrid aligned nematic(HAN) cell,based on the Landau-de Gennes theory.When the cell gap d is larger than a critical value of 12ξ(where ξis the characteristic length for order-parameter change),the pair annihilates.A pure HAN configuration without defect is formed in an equilibrium state.In the confined geometry of d ≤ 12ξ,the diffusion process is discovered for the first time and an eigenvalue exchange configuration is formed in an equilibrium state.The eigenvalue exchange configuration is induced by different essential reasons.When 10ξ < d ≤ 12ξ,the two defects coalesce and annihilate.The biaxial wall is created by the inhomogeneous distortion of the director,which results in the eigenvalue exchange configuration.When d≤ 10ξ,the defects do not collide and the eigenvalue exchange configuration originates from the biaxial seeds concentrated at the defects.
Confined geometry can change the defect structure and its properties. In this paper, we investigate numerically the dynamics of a dipole of ± 1/2 parallel wedge disclination lines in a confined geometry: a thin hybrid aligned nematic (HAN) cell, based on the Landau-de Gennes theory. When the cell gap d is larger than a critical value of 12ξ (where ξis the characteristic length for order-parameter change), the pair annihilates. A pure HAN configuration without defect is formed in an equilibrium state. the confined geometry of d ≤ 12ξ, the diffusion process is discovered for the first time and an eigenvalue exchange configuration is formed in an equilibrium state. eigenvalue exchange configuration is induced by different essential reasons. coalesce and annihilate.The biaxial wall is created by the inhomogeneous distortion of the director, which results in the eigenvalue exchange configuration. WHERE d ≤ 10ξ, the defects do not collide and the eigenvalu e exchange configuration originates from the biaxial seeds concentrated at the defects.