利用等离子体辅助脉冲磁控溅射实现多晶硅薄膜的低温沉积

来源 :物理学报 | 被引量 : 0次 | 上传用户:hello_junz
下载到本地 , 更方便阅读
声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架
论文部分内容阅读
本文报道了利用电感耦合等离子体辅助中频直流脉冲磁控溅射在温度300℃以下沉积氢化多晶硅薄膜的制备方法.利用拉曼散射、X射线衍射、透射电子衍射和傅里叶红外光谱对多晶硅薄膜进行了表征.详细研究了氢气在沉积过程中所起的作用,并结合Langmuir探针和发射光谱等等离子体诊断方法,对辅助等离子体源在多晶硅薄膜制备过程中所起到的作用进行了讨论. This paper reports the preparation of hydrogenated polycrystalline silicon thin films deposited by inductively coupled plasma-assisted DC-DC magnetron sputtering at a temperature below 300 ℃ .Polymorphous polycrystalline silicon films were deposited by Raman scattering, X-ray diffraction, transmission electron diffraction and Fourier transform infrared spectroscopy The role of hydrogen in the deposition process was studied in detail, and the role of plasma assisted plasma source in the preparation of polycrystalline silicon thin films was discussed in conjunction with the Langmuir probe and emission spectroscopy and other plasma diagnostics .
其他文献