对GaN基蓝光功率型LED在老化前和老化期间施加反向人体模式静电放电(ESD),并对静电打击前后及老化前后的LED光学电学参数进行分析。实验结果及理论分析表明,ESD使LED芯片有源层及限制层中产生缺陷,最终导致电学特性及光学特性的变化。ESD给LED带来的损伤可在老化前期过程中被局部恢复,但随着老化时间推移,电参数漂移程度及光衰幅度不断增大,而老化过程中LED对ESD的敏感度增加,使LED抗ESD能力减弱。 Reverse human body mode electrostatic discharge (ESD) was applied to the GaN-based blue power LED before and during aging, and the optical electrical parameters of the LED before and after the ESD and before and after the ESD were analyzed. Experimental results and theoretical analysis show that ESD causes defects in the active layer and the limiting layer of the LED chip, which eventually leads to changes in the electrical characteristics and the optical characteristics. ESD damage caused by the LED can be locally recovered during the pre-aging process, but as the aging time goes by, the degree of electrical parameter drift and the rate of light failure increase ceaselessly, and the LED sensitivity to ESD increases during the aging process, so that the LED Anti-ESD ability weakened.