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针对目前多量子阱激光器结构设计中，忽略了载流子在每个阱内的注入不均匀性的问题，从油松方程和电流连续方程出发，提出每个阱单独考虑的计算方法，从而比较精确地计算出多量子阱激光器的净增益，给出多量子阱激光器的最佳阱数选择，根据设计结果，生长了ＩｎＧａＡｓＰ分别限制量子阱结构．利用质子轰击制得条形量子阱激光器，实现室温连续工作．阈值电流为６０ｍＡ，激射波长为１．５２μｍ，单面输出外微分量子效率为３６％．
In view of the current multi-quantum well laser structure design, the problem of carrier inhomogeneity in each well is neglected. Based on the pine smoothing equation and the current continuous equation, a calculation method for each well is proposed to compare with each other The net gain of multi-quantum well laser is accurately calculated, and the optimal well number of multi-quantum well laser is given. According to the design results, InGaAsP is respectively grown to limit the quantum well structure. Proton bombardment using stripe quantum well laser to achieve continuous operation at room temperature. Threshold current of 60mA, lasing wavelength of 1.52μm, single-sided output differential quantum efficiency of 36%.