阳极氧化法制备的多孔硅层分别经 1% HF、 1% NH3 / H2 O2 和 0 .0 5 % Na OH三种溶液在室温下进行湿法腐蚀 ,并用傅里叶变换红外光谱 (FTIR)和扫描电子显微镜 (SEM)对其变化进行了研究。腐蚀后多孔硅的表面形貌出现明显的刻蚀现象。红外吸收光谱表明 ,在用 1% NH3 / H2 O2 溶液腐蚀时 ,多孔硅层中 Si- O键和 Si- H键的强度增加 ,H- O键的强度下降 ;用 1% HF溶液和 0 .0 5 % Na OH溶液的腐蚀结果正好相反。 0 .0 5 %Na OH溶液对多孔硅层的腐蚀现象类似于强碱性溶液对单晶硅腐蚀表现出的各向异性 ,对多孔硅层厚度的腐蚀速度比 1% HF溶液的高 The porous silicon layers prepared by the anodization method were respectively wet-etched by three solutions of 1% HF, 1% NH3 / H2O2 and 0. 05% NaOH at room temperature and characterized by Fourier transform infrared spectroscopy (FTIR) Scanning electron microscopy (SEM) of its changes were studied. After etching the surface morphology of porous silicon obvious etching phenomenon. Infrared absorption spectra showed that the Si-O bond and Si-H bond strength increased and the H-O bond strength decreased in the porous Si layer when treated with 1% NH3 / H2O2 solution. Corrosion results for 0 5% Na OH solution are the opposite. The corrosion of porous silicon layer by 0. 05% NaOH solution is similar to the anisotropy of monocrystalline silicon etching by strong alkaline solution. The corrosion rate of porous silicon layer is higher than that of 1% HF solution