用剥层霍耳测量分析了ＭＢＥ生长ＨｇＣｄＴｅ薄膜的Ｂ离子注入的电学特性，测量了薄膜材料的载流子浓度和迁移率分布．当剥层腐蚀到结区，结区增透引起红外透射光谱的峰值提高． The electrical characteristics of B ion implantation of MBE grown HgCdTe films were analyzed by peel-off Hall effect, and the carrier concentration and mobility distribution of the films were measured. When the stripping corrosion to the junction area, the junction area increased penetration caused by the infrared transmission spectrum peak increased.