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从理论和实验上分析了HgCdTe光导(PC)及扫积型(SPRITE)器件的瞬态衰退过程,结果表明在高偏置电场下,光导器件的衰退过程近似线性,扫积型器件的衰退过程近似矩形.由衰退过程曲线可以确定过剩载流子的双极迁移率.
The transient decay process of HgCdTe PC and SPRITE is analyzed theoretically and experimentally. The results show that the decay process of PCD is nearly linear and the decay process Approximate Rectangle The bipolar mobility of excess carriers can be determined from the decay process curve.