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This paper reports that Ni and Ti/4H-SiC Schottky barrier diodes(SBDs) were fabricated and irradiated with 1 MeV electrons up to a dose of 3.43×10~(14) e/cm~2.After radiation,the Schottky barrier heightφb of the Ni/4H-SiC SBD increased from 1.20 eV to 1.21 eV,but decreased from 0.95 eV to 0.94 eV for the Ti/4H-SiC SBD.The degradation ofφB could be explained by interface states of changed Schottky contacts.The on-state resistance R_S of both diodes increased with the dose,which can be ascribed to the radiation defects.The reverse current of the Ni/4H-SiC SBD slightly increased,but for the Ti/4H-SiC SBD it basically remained the same.At room temperature,φB of the diodes recovered completely after one week,and the R_S partly recovered.
This paper reports that Ni and Ti / 4H-SiC Schottky barrier diodes (SBDs) were fabricated and irradiated with 1 MeV electrons up to a dose of 3.43 × 10 ~ (14) e / cm ~ 2.After radiation, the Schottky barrier height φb of the Ni / 4H-SiC SBD increased from 1.20 eV to 1.21 eV, but decreased from 0.95 eV to 0.94 eV for the Ti / 4H-SiC SBD.The degradation of φ B could be explained by the states of the interfaces Schottky contacts. state resistance R_S of both diodes increased with the dose, which can be ascribed to the radiation defects. The reverse current of the Ni / 4H-SiC SBD slightly increased, but for the Ti / 4H-SiC SBD it basically remained the same. At room temperature, φB of the diodes recovered completely after one week, and the R_S partly recovered.