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本文报道了采用倒置交错结构（Ｔａ／（Ｔａ２Ｏ５）ＳｉＮｘ／ｉｎ＋ａ－Ｓｉ／Ａ１）的ＴＥＴ矩阵研究结果．其关态电流（Ｉ_ｏｆｆ（－５Ｖ））在５—７×１０￣－１４Ａ（对Ｗ／Ｌ＝１０），开态电流Ｉ_ｏｎ（Ｚ０Ｖ）大于１０μＡ，Ｉ_ｏｎ／Ｉｏｆｆ在１０８量级，场效应迁移率可达０．７９ｃｍ２／Ｖ．ｓ．
This paper reports the results of a TET matrix using an inverted staggered structure (Ta / (Ta2O5) SiNx / in + a-Si / A1). The off-state current (I_off (-5V)) is in the range of 5-7 × 10 ~-14A for W / L = 10, the on-state current I_on is greater than 10μA, and I_on / Effect of mobility up to 0.79cm2 / V. s.