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We studied the performance of AlGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) with an AlGaN buffer layer,which leads to a higher potential barrier at the backside of the twodimensional electron gas channel and better carrier confinement.This,remarkably,reduces the drain leakage current and improves the device breakdown voltage.The breakdown voltage of AlGaN/GaN double heterojunction HEMTs (~ 100 V) was significantly improved compared to that of conventional AlGaN/GaN HEMTs(~50 V) for the device with gate dimensions of 0.5 x 100μm and a gate-drain distance of 1μm.The DH-HEMTs also demonstrated a maximum output power of 7.78 W/mm,a maximum power-added efficiency of 62.3%and a linear gain of 23 dB at the drain supply voltage of 35 V at 4 GHz.
We studied the performance of AlGaN / GaN double heterojunction high electron mobility transistors (DH-HEMTs) with an AlGaN buffer layer, which leads to a higher potential barrier at the backside of the twodimensional electron gas channel and better carrier confinement.This, remarkably, reduces the drain leakage current and improves the device breakdown voltage. breakdown voltage of AlGaN / GaN double heterojunction HEMTs (~ 100 V) was significantly improved compared to that of conventional AlGaN / GaN HEMTs (~ 50 V) for the device with gate dimensions of 0.5 x 100 μm and a gate-drain distance of 1 μm. The DH-HEMTs also demonstrated a maximum power output of 7.78 W / mm, a maximum power-added efficiency of 62.3% and a linear gain of 23 dB at the drain supply voltage of 35 V at 4 GHz.