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介绍垂直多结器件的结构,给出了热迁移制结的工艺条件和结果;介绍了处理器件电极引线的隔离线方法,解决了经过热迁移掺杂后光刻电极套不准的难题,解决了把所有P型区域连接起来的问题,达到了敏感区金属零遮挡的目的.描述了利用展宽电极尺度的方法实现多单元器件的集成;给出了X光强与光电流电压之间的数学模型和几个重要参数,介绍了器件输出电压与X光强度之间的测量关系,理论与实际情况符合得非常好.最后对测量数据做了分析,证明器件有足够的灵敏度和分辨率.
The structure of vertical multi-junction device is introduced, and the process conditions and results of heat transfer junction are given. The method of isolating the electrode lead of the device is introduced, and the problem of inaccurate lithography of the electrode is solved after heat transfer and doping The problem of connecting all the P-type regions achieves the goal of metal zero-shielding in the sensitive area, describes the integration of multi-cell devices using the method of broadening the electrode dimensions, and gives the mathematics between X-ray intensity and photocurrent voltage Model and some important parameters, the measurement relationship between the output voltage of the device and the intensity of X-ray is introduced, and the theory is in good agreement with the actual situation.At last, the measurement data are analyzed to prove that the device has sufficient sensitivity and resolution.