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提出了一种新型SBD器件结构,并应用于高压SBD产品的研制。该结构通过在肖特基势垒区的硅表面增加一层表面缓冲掺杂层(Improved Surface Buffer Dope),将高压SBD的击穿点从常规结构的PN结保护环区域转移到平坦的肖特基势垒区,从根本上提高了器件的反向静电放电(ESD)和浪涌冲击能力。经流片验证,采用该结构的10A150VSBD产品和10A200VSBD产品均通过了反向静电放电(HBM模式)8kV的考核,达到目前业界领先水平。该结构工艺实现简单,可以应用于100V以上SBD的批量生产。
A new SBD device structure is proposed and applied to the development of high voltage SBD products. The structure of the Schottky barrier region by adding a layer of silicon surface buffer layer (Buffer Surface Improved Doping), high-voltage SBD breakdown point from the conventional structure of the PN junction guard ring area is transferred to a flat Schottky Basis barrier region, fundamentally improve the device’s reverse electrostatic discharge (ESD) and surge impact capability. Verified by the chip, using the structure of the 10A150VSBD products and 10A200VSBD products have passed the reverse electrostatic discharge (HBM mode) 8kV assessment, to achieve the current industry-leading level. The structure of the process to achieve a simple, can be applied to more than 100V SBD batch production.