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Nanocomposite Si_(1-x)Gex films are deposited by dual-source jet-type inductively coupled plasma chemical vapor deposition(jet-ICPCVD).The segregations and desorptions of Ge atoms,which dominate the structural evolutions of the films during high-temperature annealing,are investigated.When the annealing temperature(Ta)is 900~℃,the nanocomposite Si_(1-x)Gex films are well crystallized,and nanocrystals(NCs)with the core-shell structure form in the films.After being annealed at 1000~℃(above the melting point of bulk Ge),Ge atoms accumulate on the surfaces of Ge-rich films,whereas pits appear on films with lower Ge content,resulting from desorption.Meanwhile,voids are observed in the films.A cone-like structure involving the percolation of the homogeneous clusters and the crystallization of NCs enhances Ge segregation.
Nanocomposite Si_ (1-x) Gex films are deposited by dual-source jet-type inductively coupled plasma chemical vapor deposition (jet-ICPCVD). The segregations and desorptions of Ge atoms, which dominate the structural evolutions of the films during high-temperature The nanocomposite Si_ (1-x) Gex films are well crystallized, and nanocrystals (NCs) with the core-shell structure in the films. After being annealed at 1000 ~ C (above the melting point of bulk Ge), Ge atoms accumulate on the surfaces of Ge-rich films, where pits appear on films with lower Ge content, resulting from desorption. Meanwhile, voids are observed in the films. A cone-like structure involving the percolation of the homogeneous clusters and the crystallization of NCs enhances Ge segregation.