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利用强流脉冲电子束(HCPEB)技术对多晶纯铝样品进行辐照,采用透射电子显微镜详细分析了辐照诱发的空位簇缺陷.HCPEP辐照后,在辐照表层内形成了大量的四方形空位胞,其间包含位错圈和堆垛层错四面体(SFT)等类型的空位簇缺陷.1次辐照后,空位胞内产生空位型位错圈,5次辐照则主要产生SFT;10次辐照后,空位胞内产生的空位簇缺陷主要是位错圈,局部区域也观察到了SFT缺陷,在产生SFT的附近区域具有很低的位错密度或者几乎无位错出现.HCPEB辐照产生的瞬间加热和冷却诱发了幅值极大且应变速率极高的应力,这一因素导致的整个原子平面的位移可能是SFT形成的原因所在.
High intensity pulsed electron beam (HCPEB) was used to irradiate polycrystalline pure aluminum samples, and the defects of vacancy clusters induced by irradiation were analyzed in detail by transmission electron microscope.HCPEP irradiated a large amount of tetrakis The square vacancy cells contain dislocation loops and stacking fault tetrahedra (SFT) and other types of vacancy cluster defects.After the first irradiation, vacancies generated vacancies dislocation circle, five times the radiation is mainly generated SFT After 10 cycles of irradiation, vacancy cluster vacancies were mainly dislocation loops, SFT defects were also observed in local regions, with very low dislocation density or almost no dislocation in the vicinity of SFT generation.HCPEB The instantaneous heating and cooling induced by the irradiation induce a stress of great magnitude and high strain rate, and the displacement of the entire atomic plane due to this factor may be responsible for the SFT formation.