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本文采用γ射线、高能电子和中子对Ti/4H-SiC肖特基势垒二极管(SBD)的抗辐射特性进行了研究.研究发现对于γ射线和1MeV电子辐照,-30V辐照偏压对器件的辐照效应没有明显的影响.经过1Mrad(Si)的γ射线或者1×l013n/cm2的中子辐照后,Ti/4H-SiC肖特基接触都没有明显退化;经过3.43×1014e/cm2的1MeV电子辐照后Ti/4H-SiC的势垒高度比辐照前轻微下降,这是由于高能电子引入的电离损伤造成的,且可以在常温下退火恢复.分别经过1Mrad(Si)的γ射线和3.43×1014e/cm2的电子辐照后,器件反向电流的变化都比较轻微,显示了良好的抗辐射特性.实验同时还发现电子和中子辐照会造成器件串联电阻增加.
In this paper, the anti-radiation characteristics of Ti / 4H-SiC Schottky barrier diode (SBD) were studied by using γ-rays, high energy electrons and neutrons. It was found that for γ-ray and 1MeV electron irradiation, -30V irradiation bias Had no significant effect on the irradiation effect of the device.The Schottky contact of Ti / 4H-SiC showed no significant degradation after 1 Mrad (Si) γ-ray or 1 × 1013n / cm2 neutron irradiation. After 3.43 × 1014e The potential barrier height of Ti / 4H-SiC after 1 MeV electron irradiation / cm2 was slightly lower than that before irradiation due to the ionization damage induced by high-energy electrons and could be annealed at room temperature.After 1Mrad (Si) Γ radiation and 3.43 × 1014e / cm2 electron irradiation, the device reverse current changes are relatively mild, showing good anti-radiation properties.Experiments also found that the electron and the neutron irradiation will cause the device series resistance increases.