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我们采用俄歇电子能谱仪对液相外延生长的GaAs—Al_xGa_(1-x)As异质结构进行了研究。结果表明:在异质结界面处有一过渡层,其组分由异质结的一边向另一边单调地变化,过渡层的厚度依赖于溶液的饱和度。还对外延片表面的沾污情况进行了观测分析。
We studied the GaAs-Al_xGa_ (1-x) As heterostructures grown by liquid phase epitaxy using Auger electron spectroscopy. The results show that there is a transition layer at the interface of the heterojunction whose composition varies monotonically from one edge of the heterojunction to the other. The thickness of the transition layer depends on the saturation of the solution. Also observed the surface of the wafer smear observations.