Electroluminescent Exciation Mechansim of Erbium—activated Zinc Sulfide Semicoductor Thin Film Eevi

来源 :半导体光子学与技术：英文版 | 被引量 : 0次 | 上传用户：lpflpf7337

【摘要】

：

The electrolumescence(EL) transient charactristics of erbium-doped zinc sulfide thin film(TF)devices excited by short rectangular pulses are studied.the lumines

【作者】

：

LIUZhaohong WANGYujiang 等

【机构】

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XiamenUniversity

【出处】

：

半导体光子学与技术：英文版

【发表日期】

：

1996年3期

【关键词】

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半导体材料薄膜器件电致发光 EL显示器 Semiconductor Materials Thin Film Devices Electrolumines

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The electrolumescence(EL) transient charactristics of erbium-doped zinc sulfide thin film(TF)devices excited by short rectangular pulses are studied.the luminescence delay atfer de-exciting and the relaxation luminance peaks during decay are observed.A mo

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Electroluminescent Exciation Mechansim of Erbium—activated Zinc Sulfide Semicoductor Thin Film Eevi

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