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究了用低压金属有机物化学沉积方法生长得到的具有不同 Mg掺杂浓度的 Ga N样品薄膜 ,经不同温度退火处理后的发光特性 .实验发现随着退火温度的升高 ,不同掺杂浓度的 Mg∶ Ga N材料的光致发光谱蓝带峰能量相差变小 ,经 85 0℃退火后蓝带集中在 2 .92 e V附近 .利用 Mg∶ Ga N材料内部补偿模型对此现象进行了分析 ,同时认为对于掺杂浓度较高的样品 ,85 0℃为最佳的退火温度 .
The GaN thin films with different Mg doping concentrations grown by low pressure metal organic chemical deposition were investigated and their luminescent properties after annealing at different temperatures were investigated. It was found that with the increase of annealing temperature, the doping concentration of Mg : The photoluminescence spectrum of Ga N material has a smaller difference in the energy of the blue band peak, and the blue band concentrates near 2.92 e V after annealing at 85 0 ° C. The internal compensation model of Mg: Ga N material is used to analyze this phenomenon, At the same time, it is considered that the optimum annealing temperature is 85 ℃ for samples with higher doping concentration.