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采用中频磁控溅射法在玻璃基体上制备Al掺杂ZnO薄膜(AZO),分别利用扫描电子显微镜(SEM)、原子力显微镜(AFM)、X射线衍射仪(XRD)、分光光度计及霍尔测试系统研究不同沉积条件如样品台转速和靶-基距离对薄膜光学、电学、微观形貌及晶体结构的影响。XRD结果表明,所有AZO薄膜都呈c轴择优取向,薄膜的结晶度随着样品台转速的增大而降低,且晶粒呈非平衡状态生长。而在不同的靶-基距离时,薄膜具有相似的微观结构和表面形貌。当样品台转速为0、靶-基距离为7 cm时,AZO薄膜的光电性能最好,载流子浓度和霍尔迁移率分别为5.9×1020 cm-3和13.1 cm2/(V·s)。研究结果表明,样品台转速是影响AZO膜的结构和性能的主要因素。
Al-doped ZnO thin films (AZO) were prepared on a glass substrate by medium-frequency magnetron sputtering. The microstructures of Al-doped ZnO thin films were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD) The test system was used to study the influence of different deposition conditions such as sample stage rotation speed and target-base distance on the optical, electrical, micro-morphology and crystal structure of the films. XRD results showed that all the AZO films showed c-axis preferred orientation. The crystallinity of the AZO films decreased with the increase of sample rotation speed and the grains grew in an unbalanced state. At different target-base distances, the films have similar microstructure and surface topography. When the sample stage rotation speed is 0 and the target-base distance is 7 cm, the optical properties of AZO films are best, and the carrier concentration and Hall mobility are 5.9 × 10 20 cm -3 and 13.1 cm 2 / (V · s) . The results show that the sample stage speed is the main factor affecting the structure and properties of AZO films.