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美国专利US7544532 (2009年6月9日授权)本发明提供采用改进型钝化层的InSb红外光电二极管及传感器列阵,同时还提供了其制作方法。该方法的具体步骤如下:在n型衬底中形成光电二极管探测器区之前,用分子束外延技术在n型InSb衬底上沉积一层AlInSb钝化层;直接通过该AlInSb钝化层注入一种合适的P~+掺杂剂,以形成光电二极管探测器区;有选择地去除AlInSb钝化层,使InSb衬底的第一区暴露出来,然后在InSb衬底第一区形成栅接点;在光电二极管
United States Patent No. US7544532 (issued on June 9, 2009) The present invention provides an InSb infrared photodiode and sensor array using an improved passivation layer, and also provides a method of making the same. The specific steps of the method are as follows: Prior to the formation of the photodiode detector region in the n-type substrate, a layer of AlInSb passivation layer is deposited on the n-type InSb substrate by molecular beam epitaxy; the first A suitable P ~ + dopant to form a photodiode detector region; selectively removing the AlInSb passivation layer to expose a first region of the InSb substrate and then forming a gate contact in a first region of the InSb substrate; In the photodiode