虽然GaAs FET(砷化镓场效应晶体管)的性能至少可根据几何形状和掺杂等因素大致加以预测,但其可靠性只能靠实测加以确定。金属结构、钝化,封装中轻微的差别,就会引起完全不同的老化特性。大多数的可靠性研究有三个目的。第一,得到能有效地估计器件在实际工况下的失效率所需的数据。第二,发现和理解失效机理,以便尽可能将其影响消除。第三,建立筛选法,确保生产的器件和可靠性数据所基于的组件完 Although the performance of a GaAs FET (gallium arsenide field effect transistor) can be at least roughly predicted based on factors such as geometry and doping, its reliability can only be determined by field measurements. Metal structures, passivation, and slight variations in packaging result in completely different aging characteristics. Most reliability studies have three purposes. First, get the data needed to effectively estimate the device’s failure rate under real-world conditions. Second, discover and understand the failure mechanisms so that their effects are eliminated as much as possible. Third, establish a screening method to ensure that components and reliability data are produced based on the finished components