非极性GaN基器件正在受到很大的关注,因为它们不受极化相关的电场伤害,但目前其性能受制于高缺陷密度。不过,现在这种情况可以完全改观了。加里福尼亚大学的一个研究小组表示,在GaN外延层之间插入一层很薄的SiN层可减小缺陷密度。这项工艺将a面非极性膜中的堆垛缺陷密度从8×10 Non-polar GaN-based devices are receiving a great deal of attention as they are not harmed by polarization-related electric fields but their performance is currently limited by high defect densities. However, this situation can be completely changed now. A team at the University of California said that inserting a thin layer of SiN between GaN epitaxial layers will reduce the defect density. The process will be a non-polar film a stacking defect density of 8 × 10