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主研人员:陈星弼 冯洁明 杨谟华 景惠琼 阎斌 绝缘栅双极晶体管(IGBT)是本世纪80年代中期国际上出现的一种新型电力电子器件,具有易驱动和高速度等优点,是发展新型电力电子技术的基石。研制成功的IGRT的正向阻断电压优于800V(800～1200V)、
Researcher: Chen Xingbi Feng Jieming Yang Mohua Jing Huiqiong Yan Bin Insulated Gate Bipolar Transistor (IGBT) is a new type of power electronic device appearing in the mid-1980s in the world. It has the advantages of easy driving and high speed, is the development The cornerstone of new power electronics technology. The positive blocking voltage developed by IGRT is better than 800V (800 ~ 1200V)