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用光激电流瞬态谱(PICTS)和光致发光光谱(PL)对在半绝缘GaAs衬底上MOCVD生长的CdTe薄层的缺陷进行了研究。发现CdTe薄层中存在热激活能约为0.12eV和0.27eV的二个能级。对照光致发光光谱的实验结果及有关体单晶CdTe的缺陷报道,初步分析认为第一个能级是受主能级,它由CdTe薄层中的剩余杂质所引起,而另一个能级则可能与材料的晶格缺陷有关。
The defects of MOCVD grown CdTe thin films on semi-insulating GaAs substrates were investigated by photo-induced transient current spectroscopy (PICTS) and photoluminescence (PL). It is found that there are two levels of thermal activation energy in CdTe thin films about 0.12eV and 0.27eV. Controlled photoluminescence spectra of the experimental results and reports on single-crystal CdTe defects reported, the preliminary analysis that the first energy level is the acceptor level, which is caused by the remaining impurities in the CdTe thin layer, while the other energy level May be related to the lattice defects of the material.