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提出了一种新型非对称宽耦合波导结构,通过理论计算优化了结构中n型波导层和限制层厚度,并采用低压金属有机化学气相沉积方法生长了设计的器件结构。测试了器件的光电特性,1200μm腔长器件的阈值电流为590mA,斜率效率为0.96W/A,最大输出功率达2000mW;当注入电流为0.6A时,其远场发散角为16.1°(θ⊥)×10.2°(θ∥)。实验结果表明:新型非对称宽耦合波导结构能实现器件大功率输出,有效减小器件远场垂直发散角,改善器件光束质量。
A novel asymmetric wide coupling waveguide structure is proposed. The thickness of the n-type waveguide layer and the confinement layer in the structure are optimized by theoretical calculations. The device structure is grown by low-pressure metal-organic chemical vapor deposition. The device’s optical and electrical characteristics were tested. The threshold current of 1200μm cavity device was 590mA, the slope efficiency was 0.96W / A and the maximum output power was 2000mW. When the injection current was 0.6A, the far-field divergence angle was 16.1 ° ) × 10.2 ° (θ∥). The experimental results show that the new asymmetric wide-coupling waveguide structure can realize the high-power output of the device, effectively reducing the vertical divergence angle in the far field of the device and improving the beam quality of the device.