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我们用正交表研究GaAs的欧姆接触工艺,实验结果表明,p—GaAs甩Au—Cr金、n—GaAs用Ag—Sn合金的欧姆接触工艺,比接触电阻率Rc<10~(-4)(欧姆)(厘米)~3应用于GaAs—Ga_(1-x)Al_xAs双异质结激光器,得到良好的效果。
The experimental results show that the ohmic contact process of p-GaAs with Au-Cr gold and Ag-Sn alloy with n-GaAs is better than the contact resistivity Rc <10 ~ (-4) (Ohm) (cm) ~ 3 GaAs-Ga_ (1-x) Al_xAs double heterojunction laser, get good results.