本文介绍了砷化镓微波肖特基势垒场效应晶体管源漏接触之间自动对准栅接触的方法。这个方法包括了源漏接触边缘下面砷化镓外延层的腐蚀以及用伸出部分作为栅接触金属的蒸发掩模。用这种方法制造的器件,栅长为4微米。微波测量的结果:在2千兆赫下最大可用增益为16分贝,按6分贝/倍频程下降,截止频率为11千兆赫。 This article describes a method for automatically aligning gate contacts between GaAs microwave Schottky barrier FETs. This method includes etching of the gallium arsenide epitaxial layer under the source-drain contact edge and using the overhang as an evaporation mask for the gate contact metal. Devices fabricated in this way have a gate length of 4 microns. Results from microwave measurements: The maximum available gain at 2 GHz is 16 dB, declining by 6 dB / octave with a cutoff frequency of 11 GHz.