我们在生产XFC-80双运算放大器,和F010低功耗运算放大器时,隔离预淀积开始用液态源扩散,经常出现R_口偏大,饱和时间长,尤其是在盛夏炉管稍不注意就发黑,为此,我们改用粉末状BN源,但随之而来出现了以下几个问题:①片子表面严重染色,再扩散后泡在HF:H_2O=1:1溶液里长达5～10分钟后,表面仍存在一层不溶于HF的薄膜。②隔离再扩散后表面反型,即n型处延层表面变成了p型。③基区氧化后表面反型,即隔离再扩后测隔离结击穿电压正常,但经基区氧化、光刻基区窗口后测试发现BV_(cb(?))低、软甚至穿通。 为了改变这种状况,进行了如下实验:① We are in the production of XFC-80 dual op amp, and F010 low-power op amp, isolation pre-deposition began to spread with liquid sources, often R_ mouth large, saturated a long time, especially in the summer tube slightly ignored Black, for which purpose, we use powdered BN source, but the ensuing emergence of the following questions: ① the surface of the film was severely stained, and then spread in bubble HF: H_2O = 1: 1 solution up to 5 After 10 minutes, a thin layer of HF-insoluble film remains on the surface. ② Isolation and then spread the surface of the anti-type, that is, n-type at the surface layer into a p-type. (3) After base oxide oxidation, the surface is inverted, that is to say, the voltage of the isolated junction is normal after isolation and re-expansion, but BV_ (cb (?)) Is low and soft or even through. In order to change this situation, the following experiments were carried out: ①