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研究了GaAs中杂质碳所引起的局域模振动(LVM)吸收的温度依赖关系,观测到了LVM吸收带线形、频率位置、吸收强度等的变化.在室温下红外吸收带发生温度展宽,精细结构消失,但劳仑兹线形的吸收带半宽仍很窄,仅约 1cm~(-1),基本上决定于Ga的“同位素最近邻效应”.由此得到了室温下测量GaAs中碳杂质浓度的方法.此外,对一系列在不同条件下生长的 LEC GaAs样品中碳浓度进行了测量和讨论.
The temperature dependence of local mode vibration (LVM) absorption caused by impurity carbon in GaAs was investigated, and the change of LVM absorption band shape, frequency position and absorption intensity were observed.When the temperature was broadened in the infrared absorption band at room temperature, the fine structure Disappears, but the half-width of Lorentz line’s absorption band is still very narrow, only about 1cm -1, which is basically determined by the “isotope nearest neighbor effect” of Ga. Thus, the carbon impurity concentration in GaAs measured at room temperature In addition, carbon concentrations in a series of LEC GaAs samples grown under different conditions were measured and discussed.