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研究了经过700℃快速热退火的并在Si界面处插入Al2O3阻挡层的HfO2栅介质膜的界面结构和电学性能。X射线光电子谱表明,退火后,界面层中的SiOx转化为化学当量的SiO2,而且未发现铪基硅酸盐和铪基酸化物。由电学测试提取出等效栅氧厚度为2.5nm,固定电荷密度为–4.5×1011/cm2。发现Al2O3阻挡层能有效地阻止Si原子扩散进入HfO2薄膜,进而改善HfO2栅介质膜的界面和电学性能。
The interfacial structure and electrical properties of HfO2 gate dielectric films annealed at 700 ℃ and intercalated with Al2O3 barrier layer were investigated. X-ray photoelectron spectroscopy showed that after annealing, SiOx in the interfacial layer was converted to stoichiometric SiO2, and no hafnium-based silicate and hafnium-based acid were found. The equivalent gate oxide thickness was 2.5nm and the fixed charge density was -4.5 × 1011 / cm2. It was found that Al2O3 barrier layer can effectively prevent Si atoms from diffusing into the HfO2 film, thereby improving the interfacial and electrical properties of the HfO2 gate dielectric film.