设计并研制了一种新的直脊波导集总型电吸收调制器——集总型双耗尽电吸收调制器(D-EAM)。同时,作为实验对照组,还制备了一种普通有源区结构的电吸收调制器(N-EAM)。两种器件的测试结果对比分析表明,D-EAM的电容明显要小于N-EAM。脊波导长度为250μm,宽度为2.5μm的D-EAM在-3V偏压下电容为0.225pF,对应的调制带宽估算为28.3GHz;1 550nm输入波长条件下,D-EAM在偏压为-1V至-2V之间调制效率最大,达到10dB/V,而-3V、-6V下的调制深度分别为22dB和26dB,满足40Gbit/s光纤通信要求。 A new direct ridge waveguide lumped electroabsorption modulator - lumped double-depleted electro-absorption modulator (D-EAM) was designed and developed. At the same time, as an experimental control group, an electro-absorption modulator (N-EAM) with common active region structure was also prepared. Comparative analysis of the test results of the two devices shows that the capacitance of D-EAM is obviously smaller than N-EAM. The D-EAM with a ridge waveguide length of 250μm and a width of 2.5μm has a capacitance of 0.225pF at -3V bias and an estimated modulation bandwidth of 28.3GHz. Under the input wavelength of 550nm, D-EAM has a capacitance of -1V To-2V maximum modulation efficiency, reaching 10dB / V, and -3V, -6V modulation depth of 22dB and 26dB, respectively, to meet the 40Gbit / s optical fiber communication requirements.