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采用磁控溅射方法同时在Si(100)和聚酰亚胺(PI)基体上沉积W膜,对比研究不同基体约束对纳米晶W膜微观结构及应力诱导的开裂行为的影响.结果发现,在两种基体上W膜的裂纹形态明显不同.在Si基体上W膜的裂纹呈楔形,而在PI基体上W膜的裂纹呈半圆柱形凸起于薄膜表面.这种裂纹形态的差异源于两种基体上W膜的变形机理不同.在刚性Si基体上,W膜的裂纹扩展是通过晶粒平面内的转动实现的,而在柔性PI基体上W膜裂纹扩展是通过排列晶粒在平面内、外的转动协调完成的.分析表明,两种截然不同的开裂行为与不同基体上薄膜内应力的变化规律、基体对薄膜的异质约束能力密切相关.
The effects of different matrix constraints on the microstructures and stress-induced cracking behavior of nanocrystalline W films were investigated by magnetron sputtering with simultaneous deposition of W films on Si (100) and polyimide (PI) substrates. The crack morphology of W film on the two substrates is obviously different.The W film cracks on the Si substrate are wedge-shaped, while on the PI substrate, the crack on the W film is semi-cylindrical and bulges on the film surface. The deformation mechanism of W film on the two substrates is different.In the rigid Si substrate, the crack growth of W film is realized by the rotation in the plane of the crystal, while the crack growth of W film on the flexible PI substrate is achieved by arranging the grains in Plane and outside rotation.The analysis shows that the two distinct cracking behaviors are closely related to the variation of internal stress on different substrates and the matrix’s heterogeneous binding ability.