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用PECVD法直接沉积的非晶硅(a-Si∶H)薄膜在中温情况下光退火,然后用XRD、Raman光谱和SEM分析,发现晶粒大小随退火温度和退火时间呈现量子态现象。平均晶粒大小为30 nm左右。
The amorphous silicon (a-Si: H) films directly deposited by PECVD were photo-annealed at moderate temperature. The XRD, Raman spectra and SEM analyzes showed that the grain size presented a quantum state with annealing temperature and annealing time. The average grain size is about 30 nm.