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用离子束溅射法制备了用于场发射显示器（ＦＥＤ）的ＺｎＯ：Ｚｎ荧光薄膜采用ＲＢＳ、ＸＲＤ、 ＡＦＭ、 Ｈａｌｌ和 ＰＬ谱等手段表征了热处理前后的薄膜 ＲＢＳ结果表明薄膜中存在一定数量的过量 Ｚｎ．沉积态的薄膜中同时含有非晶相和晶相，其表面形貌表现出多种结构 Ｈａｌｌ检测发现，升高热处理温度能降低薄膜中的自由载流子浓度，说明过量Ｚｎ含量的下降；当热处理温度超过４００℃时，Ｈａｌｌ迁移率迅速上升，表明薄膜结晶性能的改善在 ＺｎＯ：Ｚｎ薄膜的 ＰＬ谱中检测到紫外／紫光、蓝／绿光两组荧光峰，一价氧空位（Ｖｏ）充当了蓝／绿光的发光中心薄膜的光致发光强度受热处理温度的影响很大，可能的原因包括薄膜结构缺陷的修复、成分均匀化和过量 Ｚｎ的蒸发，但这些效应在不同温度范围的作用程度各不相同
ZnO: Zn phosphor films for field emission displays (FEDs) were prepared by ion beam sputtering. The results of RBS, XRD, AFM, Hall and PL spectra before and after heat treatment showed that a certain amount of Excess Zn. The deposited films contain both amorphous and crystalline phases, and their surface topographies show a variety of structures. The Hall test shows that increasing the heat treatment temperature can reduce the free carrier concentration in the film, indicating a decrease in the excess Zn content. When The Hall mobility increased rapidly when the temperature was over 400 ℃, indicating that the crystallinity of the film was improved. Fluorescence peaks of UV / violet and blue / green were observed in the PL spectrum of ZnO: Zn thin films. The monovalent oxygen vacancies (Vo) The photoluminescence (PL) luminescence intensity of the blue / green luminescent center film is greatly affected by the temperature of the heat treatment. Possible reasons include the repair of the film structure defects, the homogenization of the composition and the excessive Zn evaporation. However, these effects vary with different temperature ranges Different degrees of action